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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION *Low Collector Saturation Voltage *High Collector Current *Good Linearity of hFE APPLICATIONS *Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage IC Collector Current-Continuous w w scs .i w 500 V 400 V 7 V 20 A 6 A 125 W 3 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.5A ; L= 25mH IC= 10A; IB= 2A IC= 10A; IB= 2A VCB= 500V ; IE= 0 VEB= 7V; IC= 0 IC= 2A ; VCE= 5V MIN 400 2SC3528 TYP. MAX UNIT V 1.0 1.5 100 100 V V A A Switching times ton tstg tf Turn-On Time Storage Time Fall Time w w. w sem isc IC= 10A ; VCE= 5V IC= 1A ; VCE= 10V; f= 1MHz .cn i 10 15 15 MHz 1.0 2.5 1.0 s s s IC= 10A; IB1= 2.0A, IB2= -2.0A; VCC= 125V isc Websitewww.iscsemi.cn 2 |
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